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NTR4503N Power MOSFET
30 V, 2.5 A, Single N-Channel, SOT-23
Features
* * * *
Leading Planar Technology for Low Gate Charge / Fast Switching 4.5 V Rated for Low Voltage Gate Drive SOT-23 Surface Mount for Small Footprint (3 x 3 mm) Pb-Free Package is Available
V(BR)DSS
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RDS(on) TYP 85 mW @ 10 V 105 mW @ 4.5 V ID MAX 2.5 A
Applications
* DC-DC Conversion * Load/Power Switch for Portables * Load/Power Switch for Computing
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State t 10 s Power Dissipation (Note 1) Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current ESD Capability (Note 3) Steady State Steady State TA = 25C TA = 85C TA = 25C TA = 25C TA = 25C TA = 85C TA = 25C tp = 10 ms C = 100 pF, RS = 1500 W PD IDM ESD TJ, Tstg IS TL PD ID Symbol VDSS VGS ID Value 30 20 2.0 1.5 2.5 0.73 1.5 1.1 0.42 6.0 125 -55 to 150 2.0 260 W W A Unit V V A
30 V
N-Channel
D
G
S
MARKING DIAGRAM/ PIN ASSIGNMENT
3 3 Drain 1 2 TR3 SOT-23 CASE 318 STYLE 21 M 2 Source
A V C A C
Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8" from case for 10 s)
1 Gate
TR3 M
= Specific Device Code = Date Code
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device NTR4503NT1 NTR4503NT1G Package SOT-23 SOT-23 (Pb-Free) SOT-23 (Pb-Free) Shipping 3000/Tape & Reel 3000/Tape & Reel
THERMAL RESISTANCE RATINGS
Parameter Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - t < 10 s (Note 1) Junction-to-Ambient - Steady State (Note 2) Symbol RqJA RqJA RqJA Max 170 100 300 Unit C/W NTR4503NT3G
10000/Tape & Reel
1. Surface-mounted on FR4 board using 1 in sq pad size. 2. Surface-mounted on FR4 board using the minimum recommended pad size. 3. ESD Rating Information: HBM Class 0.
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2005
1
March, 2005 - Rev. 3
Publication Order Number: NTR4503N/D
NTR4503N
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current V(BR)DSS IDSS VGS = 0 V, ID = 250 mA VGS = 0 V, VDS = 24 V VGS = 0 V, VDS = 24 V, TJ = 125C Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Drain-to-Source On-Resistance VGS(TH) RDS(on) () VGS = VDS, ID = 250 mA VGS = 10 V, ID = 2.5 A VGS = 4.5 V, ID = 2.0 A Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Ciss Coss Crss Ciss Coss Crss QG(TOT) QG(TH) QGS QGD QG(TOT) QG(TH) QGS QGD VGS = 4.5 V, VDS = 24 V, ID = 2.5 A VGS = 10 V, VDS = 15 V, ID = 2.5 A VGS = 0 V, f = 1.0 MHz, VDS = 24 V VGS = 0 V, f = 1.0 MHz, VDS = 15 V 135 52 15 130 42 13 3.6 0.3 0.6 0.7 1.9 0.3 0.6 0.9 nC 250 75 25 7.0 nC pF pF gFS VDS = 4.5 V, ID = 2.5 A 1.0 1.75 85 105 5.3 3.0 110 140 S V mW IGSS VDS = 0 V, VGS = "20 V 30 36 1.0 10 "100 nA V mA Symbol Test Conditions Min Typ Max Units
SWITCHING CHARACTERISTICS (Note 5) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf td(on) tr td(off) tf VGS = 10 V, VDD = 24 V, ID = 2.5 A, RG = 2.5 W VGS = 10 V, VDD = 15 V, ID = 1 A, RG = 6 W 5.8 5.8 14 1.6 4.8 6.7 13.6 1.8 12 10 25 5.0 ns ns
DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Reverse Recovery Charge VSD tRR QRR VGS = 0 V, IS = 2.0 A VGS = 0 V, IS = 2.0 A, dIS/dt = 100 A/ms 0.85 9.2 4.0 1.2 V ns nC
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures.
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NTR4503N
TYPICAL PERFORMANCE CURVES
10 ID, DRAIN CURRENT (AMPS) 10 V 6V 5V 4.5 V 4.2 V 4V TJ = 25C 3.6 V 3.4 V 3.2 V 3V 2 0 0 1 2 3 4 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 2.8 V 2.6 V 0 2 VDS 10 V ID, DRAIN CURRENT (AMPS) 8
3.8 V
8
6
4
4 100C 25C TJ = -55C 3 4 5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 6
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.3 0.25 0.2 0.15 0.1 0.05 0 2 3 4 6 5 7 8 9 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 10 ID = 2.5 A TJ = 25C 0.12
Figure 2. Transfer Characteristics
TJ = 25C 0.11 VGS = 4.5 V 0.10
0.09
0.08 VGS = 10 V 0.07 2 3 4 5 6 ID, DRAIN CURRENT (AMPS)
Figure 3. On-Resistance vs. Gate-to-Source Voltage
1.8 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.6 1.4 1.2 1.0 0.8 0.6 -50 1 -25 0 25 50 75 100 125 150 ID = 2.5 A VGS = 10 V IDSS, LEAKAGE (nA) 100 1000
Figure 4. On-Resistance vs. Drain Current and Gate Voltage
VGS = 0 V TJ = 150C
10 TJ = 100C
5
10
15
20
25
30
TJ, JUNCTION TEMPERATURE (C)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current vs. Voltage
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NTR4503N
TYPICAL PERFORMANCE CURVES
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
300
VDS = 0 V Ciss
VGS = 0 V
TJ = 25C
15 VDS QG VGS 5 QGS QGD ID = 2.5 A TJ = 25C 0 0 1 2 3 QG, TOTAL GATE CHARGE (nC) 4
15
C, CAPACITANCE (pF)
200 Crss
10
10
100 Coss 0 10
5
0
5
VGS
0
VDS
5
10
15
20
25
30
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
100 IS, SOURCE CURRENT (AMPS) VDD = 24 V ID = 2.5 A VGS = 10 V t, TIME (ns) td(off) tf 10 td(on) tr 3
Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge
VGS = 0 V TJ = 25C
2
1
1 1 10 RG, GATE RESISTANCE (OHMS) 100
0 0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
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NTR4503N
PACKAGE DIMENSIONS
SOT-23 (TO-236) CASE 318-08 ISSUE AK
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08. INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60
A L
3 1 2
BS
V
G C D H K J
DIM A B C D G H J K L S V
STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN
SOLDERING FOOTPRINT*
0.95 0.037
0.95 0.037
2.0 0.079 0.9 0.035 0.8 0.031
SCALE 10:1 mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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NTR4503N
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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NTR4503N/D

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